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MW6S004Nt1 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for class a or class ab base station applications with frequencies up to 2000 mhz. suitable for analog and digital modulation and multicarrier amplifier applications. ? typical two - tone performance @ 1960 mhz, 28 volts, i dq = 50 ma, p out = 4 watts pep power gain ? 18 db drain efficiency ? 33% imd ? - 34 dbc ? typical two - tone performance @ 900 mhz, 28 volts, i dq = 50 ma, p out = 4 watts pep power gain ? 19 db drain efficiency ? 33% imd ? - 39 dbc ? capable of handling 5:1 vswr, @ 28 vdc, 1960 mhz, 4 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? on - chip rf feedback for broadband stability ? integrated esd protection ? rohs compliant ? in tape and reel. t1 suffix = 1000 units per 12 mm, 7 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c operating junction temperature t j 150 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 76 c, 4 w pep, two - tone case temperature 79 c, 4 w cw r jc 8.8 8.5 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: MW6S004N rev. 4, 6/2009 freescale semiconductor technical data MW6S004Nt1 1 - 2000 mhz, 4 w, 28 v lateral n - channel rf power mosfet case 466 - 03, style 1 pld 1.5 plastic ? freescale semiconductor, inc., 2007, 2009. all rights reserved.
2 rf device data freescale semiconductor MW6S004Nt1 table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 500 nadc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 50 madc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds = 28 vdc, i d = 50 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (1) (v dd = 28 vdc, i d = 50 madc, measured in functional test) v gg(q) 2.2 3 4.2 vdc drain - source on - voltage (v gs = 10 vdc, i d = 50 madc) v ds(on) ? 0.27 0.37 vdc dynamic characteristics reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 21 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 25 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 30 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 50 ma, p out = 4 w pep, f1 = 1960 mhz, f2 = 1960.1 mhz, two - tone test power gain g ps 16.5 18 20 db drain efficiency d 28 33 ? % intermodulation distortion imd ? -34 -28 dbc input return loss irl ? -12 -10 db typical performance (in freescale 900 mhz demo board, 50 ohm system) v dd = 28 vdc, i dq = 50 ma, p out = 4 w pep, f = 900 mhz, two - tone test, 100 khz tone spacing power gain g ps ? 19 ? db drain efficiency d ? 33 ? % intermodulation distortion imd ? -39 ? dbc input return loss irl ? -12 ? db 1. v gg = 11 / 10 x v gs(q) . parameter measured on freescale test fixture, due to resistive divider network on the board. refer to test circuit schematic.
MW6S004Nt1 3 rf device data freescale semiconductor figure 1. MW6S004Nt1 test circuit schematic z7 0.210 x 1.220 microstrip z8 0.054 x 0.680 microstrip z9 0.054 x 0.260 microstrip z10 0.025 x 0.930 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.020 , r = 2.5 z1 0.054 x 0.430 microstrip z2 0.054 x 0.137 microstrip z3 0.580 x 0.420 microstrip z4 0.580 x 0.100 microstrip z5 0.025 x 0.680 microstrip z6 0.210 x 0.100 microstrip rf output v bias v supply rf input dut z1 c2 r1 c8 + c1 c7 r2 z5 r3 z2 z3 z4 z6 z10 c3 c4 c5 z7 z8 c6 z9 table 6. MW6S004Nt1 test circuit component designations and values part description part number manufacturer c1 100 nf chip capacitor cdr33bx104akys kemet c2, c3, c6, c7 9.1 pf chip capacitors atc100b9r1ct500xt atc c4, c5 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c8 10 f, 35 v tantalum chip capacitor t490d106k035at kemet r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 10 k , 1/4 w chip resistor crcw12061002fkea vishay r3 10 , 1/4 w chip resistor crcw120610r0fkea vishay
4 rf device data freescale semiconductor MW6S004Nt1 figure 2. MW6S004Nt1 test circuit component layout 25 c8 MW6S004N rev 3 r1 c1 r2 c7 c2 r3 c3 c4 c5 c6
MW6S004Nt1 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc) ?28 ?16 ?20 ?24 1990 1930 irl g ps f, frequency (mhz) figure 3. two - tone wideband performance @ p out = 2 watts avg. 1980 1970 1960 1950 1940 18.4 18.2 ?35 34 33 32 ?31 ?33 d , drain efficiency (%) d 18 17.8 17.6 17.2 16.4 16.8 17.4 ?32 ?30 31 ?12 im3 p out , output power (watts) pep 14 20 1 i dq = 75 ma 19 17 16 10 20 figure 4. two - tone power gain versus output power 10 ?80 ?10 0.01 7th order v dd = 28 vdc, i dq = 50 ma f1 = 1960 mhz, f2 = 1960.1 mhz two?tone measurements 5th order 3rd order 1 ?20 ?30 ?40 ?50 ?60 p out , output power (watts) pep figure 5. intermodulation distortion products versus output power imd, intermodulation distortion (dbc) g ps , power gain (db) 10 ?60 ?25 0.1 7th order two?tone spacing (mhz) 5th order 3rd order ?30 ?35 ?40 ?45 ?50 1 100 figure 6. intermodulation distortion products versus tone spacing 26 47 p3db = 38.22 dbm (6.637 w) p in , input power (dbm) v dd = 28 vdc, i dq = 50 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1960 mhz 43 41 37 35 33 16 18 22 actual ideal 24 14 figure 7. pulsed cw output power versus input power imd, intermodulation distortion (dbc) p out , output power (dbm) 18 50 ma 62.5 ma p1db = 37.61 dbm (5.768 w) ?55 0.01 v dd = 28 vdc, p out = 2 w (avg.) i dq = 50 ma, 100 khz tone spacing 17 16.6 30 ?34 ?8 15 0.1 v dd = 28 vdc f1 = 1960 mhz, f2 = 1960.1 mhz two?tone measurements 37.5 ma 25 ma ?70 0.1 v dd = 28 vdc, p out = 2 w (avg.), i dq = 50 ma (f1 + f2)/2 = center frequency of 1960 mhz 45 39 20 p6db = 38.73 dbm (7.465 w)
6 rf device data freescale semiconductor MW6S004Nt1 typical characteristics acpr (db) 0 ?70 p out , output power (watts) avg. 50 ?20 40 ?30 30 ?40 20 ?50 10 ?60 0.01 1 10 g ps acpr figure 8. single - carrier cdma acpr, power gain and drain efficiency versus output power 10 14 20 0.01 0 60 t c = ?30 c 25 c ?30 c 1 19 18 17 16 40 30 20 10 p out , output power (watts) cw figure 9. power gain and drain efficiency versus cw output power g ps , power gain (db) g ps p out , output power (watts) cw figure 10. power gain versus output power i dq = 50 ma f = 1960 mhz v dd = 24 v 7 15 19 06 17 16 18 234 g ps , power gain (db) 12 22 1800 ?25 0 s21 f, frequency (mhz) figure 11. broadband frequency response s11 20 ?5 18 16 ?10 ?15 14 ?20 2100 2050 2000 1950 1900 1850 v dd = 28 vdc p out = 2 w cw i dq = 50 ma s11 ( db ) s21 (db) 85 c 85 c 8 5 1 v dd = 28 vdc i dq = 50 ma f = 1960 mhz 28 v 32 v d d , drain efficiency (%), g ps , power gain (db) d , drain efficiency (%) 0.1 v dd = 28 vdc, i dq = 50 ma f = 1960 mhz, n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) 15 0.1 50 d 18.5 17.5 16.5 15.5
MW6S004Nt1 7 rf device data freescale semiconductor typical characteristics 250 10 7 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 4 w pep, and d = 33%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 6 10 5 10 4 110 130 150 170 190 mttf (hours) 210 230
8 rf device data freescale semiconductor MW6S004Nt1 f = 1930 mhz z o = 10 z load z source f = 1990 mhz f = 1930 mhz f = 1990 mhz v dd = 28 vdc, i dq = 50 ma, p out = 4 w pep f mhz z source z load 1930 1.96 - j5.34 8.78 + j6.96 1960 1.89 - j5.10 8.93 + j7.46 1990 1.82 - j4.85 9.11 + j7.97 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 13. series equivalent source and load impedance
MW6S004Nt1 9 rf device data freescale semiconductor table 7. common source scattering parameters (v dd = 28 v, 50 ohm system) i dq = 50 ma f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 500 0.649 - 116.340 7.902 105.420 0.056 - 73.750 0.548 - 33.570 550 0.695 - 121.680 7.502 98.790 0.053 - 80.570 0.593 - 41.480 600 0.733 - 126.560 7.111 92.380 0.049 - 87.010 0.632 - 48.890 650 0.770 - 131.340 6.699 86.290 0.045 - 93.280 0.669 - 56.000 700 0.800 - 135.740 6.302 80.450 0.041 - 99.120 0.701 - 62.810 750 0.827 - 140.030 5.922 74.850 0.038 - 104.850 0.727 - 69.290 800 0.848 - 143.950 5.552 69.630 0.035 - 110.110 0.750 - 75.350 850 0.866 - 147.690 5.220 64.580 0.032 - 115.220 0.770 - 81.130 900 0.882 - 151.140 4.891 59.970 0.029 - 119.960 0.786 - 86.570 950 0.895 - 154.560 4.597 55.490 0.026 - 124.790 0.800 - 91.730 1000 0.907 - 157.590 4.315 51.240 0.024 - 129.090 0.813 - 96.660 1050 0.916 - 160.540 4.060 47.170 0.022 - 133.370 0.824 - 101.340 1100 0.923 - 163.310 3.819 43.340 0.020 - 137.460 0.833 - 105.790 1150 0.929 - 165.930 3.601 39.650 0.018 - 141.440 0.840 - 110.050 1200 0.935 - 168.430 3.398 36.110 0.017 - 145.330 0.847 - 114.170 1250 0.938 - 170.770 3.210 32.740 0.015 - 149.540 0.851 - 118.060 1300 0.942 - 173.030 3.036 29.490 0.014 - 153.430 0.856 - 121.880 1350 0.945 - 175.140 2.875 26.360 0.013 - 157.460 0.859 - 125.520 1400 0.948 - 177.170 2.728 23.330 0.012 - 161.910 0.863 - 129.020 1450 0.951 - 179.090 2.590 20.440 0.011 - 166.180 0.866 - 132.390 1500 0.953 179.030 2.464 17.640 0.010 - 170.630 0.869 - 135.650 1550 0.954 177.270 2.347 14.920 0.009 - 174.890 0.872 - 138.760 1600 0.955 175.570 2.240 12.320 0.008 179.950 0.875 - 141.750 1650 0.956 173.980 2.139 9.740 0.008 173.920 0.877 - 144.650 1700 0.957 172.350 2.047 7.250 0.007 167.710 0.880 - 147.480 1750 0.957 170.800 1.958 4.810 0.007 161.810 0.882 - 150.180 1800 0.958 169.340 1.879 2.440 0.006 155.370 0.884 - 152.760 1850 0.959 167.920 1.806 0.260 0.006 148.940 0.886 - 155.230 1900 0.959 166.510 1.736 - 1.980 0.005 142.630 0.887 - 157.580 1950 0.960 165.200 1.668 - 4.310 0.005 136.740 0.888 - 160.050 2000 0.959 163.800 1.611 - 6.240 0.005 129.910 0.890 - 162.070 2050 0.959 162.420 1.555 - 8.290 0.005 123.810 0.891 - 164.190 2100 0.958 161.170 1.504 - 10.270 0.005 118.200 0.892 - 166.140 2150 0.958 159.840 1.456 - 12.210 0.005 112.740 0.893 - 168.060 2200 0.957 158.560 1.412 - 14.130 0.005 108.460 0.894 - 169.840 2250 0.957 157.160 1.372 - 16.010 0.005 103.840 0.896 - 171.610 2300 0.955 155.870 1.334 - 17.870 0.005 99.310 0.896 - 173.260 2350 0.954 154.510 1.300 - 19.700 0.005 95.360 0.897 - 174.830 2400 0.953 153.120 1.268 - 21.510 0.005 91.030 0.898 - 176.390 2450 0.953 151.730 1.238 - 23.250 0.005 87.460 0.899 - 177.840
10 rf device data freescale semiconductor MW6S004Nt1 table 7. common source scattering parameters (v dd = 28 v, 50 ohm system) (continued) i dq = 50 ma f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2500 0.952 150.340 1.211 - 25.120 0.006 84.160 0.899 - 179.270 2550 0.950 149.010 1.187 - 26.920 0.006 80.780 0.897 179.420 2600 0.949 147.380 1.166 - 28.650 0.006 77.880 0.897 178.120 2650 0.948 145.920 1.144 - 30.420 0.007 74.670 0.898 176.840 2700 0.944 144.200 1.121 - 32.310 0.007 71.360 0.896 175.480 2750 0.944 142.790 1.105 - 34.230 0.007 67.980 0.897 174.060 2800 0.943 141.020 1.088 - 36.000 0.007 63.950 0.897 172.930 2850 0.941 139.410 1.073 - 37.870 0.007 61.230 0.896 171.630 2900 0.940 137.640 1.058 - 39.760 0.008 59.810 0.896 170.330 2950 0.938 135.900 1.045 - 41.680 0.008 58.280 0.896 169.040 3000 0.937 133.860 1.032 - 43.610 0.008 56.740 0.895 167.510
MW6S004Nt1 11 rf device data freescale semiconductor package dimensions case 466 - 03 issue d notes: 1. interpret dimensions and tolerances per asme y14.5m, 1984. 2. controlling dimension: inch 3. resin bleed/flash allowable in zone v, w, and x. dim min max min max millimeters inches a 0.255 0.265 6.48 6.73 b 0.225 0.235 5.72 5.97 c 0.065 0.072 1.65 1.83 d 0.130 0.150 3.30 3.81 e 0.021 0.026 0.53 0.66 f 0.026 0.044 0.66 1.12 g 0.050 0.070 1.27 1.78 h 0.045 0.063 1.14 1.60 k 0.273 0.285 6.93 7.24 l 0.245 0.255 6.22 6.48 n 0.230 0.240 5.84 6.10 p 0.000 0.008 0.00 0.20 q 0.055 0.063 1.40 1.60 r 0.200 0.210 5.08 5.33 s 0.006 0.012 0.15 0.31 u 0.006 0.012 0.15 0.31 zone v 0.000 0.021 0.00 0.53 zone w 0.000 0.010 0.00 0.25 zone x 0.000 0.010 0.00 0.25 style 1: pin 1. drain 2. gate 3. source 4. source j 0.160 0.180 4.06 4.57 a b d f l r 3 4 2 1 k n zone v zone w zone x g s h u 10 draft p c e 0.35 (0.89) x 45 5 yy q view y - y 4 2 1 3 plastic pld 1.5
12 rf device data freescale semiconductor MW6S004Nt1 product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 2 feb. 2007 ? corrected msl rating from 3 to 1 in table 4, moisture sensitivity level, p. 2 ? updated v gs(th) and v gs(q) to reflect tighter hv6 windows and added fixture gate quiescent v gg(q) to on characteristics table to account for test fixture resistor divider network, p. 2 ? updated part numbers in table 6, component designations and values, to rohs compliant part numbers, p. 3 ? removed lower voltage tests from fig. 10, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced figure 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history section, p. 12 3 apr. 2009 ? corrected esd structures to reflect current testing results. changed hbm from 1a to 1c and cdm from iii to iv, p. 1 ? corrected c iss test condition to indicate ac stimulus on the v gs connection versus the v ds connection, dynamic characteristics table, p. 2 ? updated pcb information to show more specific material details, fig. 1, test circuit schematic, p. 3 ? updated part numbers in table 6, component designations and values, to latest rohs compliant part numbers, p. 3 4 june 2009 ? modified data sheet to reflect msl rating change from 1 to 3 as a result of the standardization of packing process as described in product and process change notification number, pcn13516, p. 2 ? added electromigration mttf calculator and rf high power model availability to product documentation, tools and software, p. 12
MW6S004Nt1 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007, 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MW6S004N rev. 4, 6/2009

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